| PART |
Description |
Maker |
| K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0 |
From old datasheet system
EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC
32M x 8 Bit NAND Flash Memory
|
Samsung Electronics Inc
SAMSUNG[Samsung semiconductor]
|
| AT49F8192 AT49F8192- AT49F8192T-90TI AT49F8192-12R |
8-Megabit 512K x 16 5-volt Only CMOS Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
8-Megabit 512K x 16 5-volt Only CMOS Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO44
Quadruple 2-Input Positive-NAND Gate 14-TSSOP -40 to 125
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| MT29F8G08AAAC4 MT29F8G08AAAC6 MT29F16G08DAAWP |
NAND Flash Memory
|
Micron
|
| MT29F1G16ABCHC MT29F1G08ABCH4 |
NAND Flash Memory
|
Micron Technology
|
| MT29F16G16ADBCA MT29F16G08ADBCA MT29F8G08ABACA |
NAND Flash Memory
|
Micron
|
| K9F6408U0M-TCB0 K9F6408U0M-TIB0 |
8M x 8 Bit NAND Flash Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K9F6408U0M-TCB0 K9F6408U0M-TIB0 |
8M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM29V64001TS KM29V64001RS |
8M X 8 BIT NAND FLASH MEMORY
|
Samsung semiconductor
|
| HY27UH088G2M HY27UH088GDM |
8G-Bit NAND Flash Memory
|
Hynix Semiconductor
|
| KM29V16000AR |
2M X 8 BIT NAND FLASH MEMORY
|
Samsung semiconductor
|
